STT03N20 Todos los transistores

 

STT03N20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STT03N20

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.7 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 12 nC

Conductancia de drenaje-sustrato (Cd): 20 pF

Resistencia drenaje-fuente RDS(on): 2.43 Ohm

Empaquetado / Estuche: SOT223

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STT03N20 Datasheet (PDF)

1.1. stt03n20.pdf Size:127K _samhop

STT03N20
STT03N20

Green Product STT03N20 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (Ω) Max VDSS ID Rugged and reliable. 2.43 @ VGS=10V Surface Mount Package. 200V 0.7A 2.66 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA

4.1. stt03n10.pdf Size:134K _samhop

STT03N20
STT03N20

Green Product STT03N10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Typ Rugged and reliable. 235 @ VGS=10V Surface Mount Package. 100V 2.5A 300 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2

 5.1. stt03l06.pdf Size:134K _samhop

STT03N20
STT03N20

Green Product STT03L06 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 100 @ VGS=10V Surface Mount Package. 60V 3A 125 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

5.2. stt03l03.pdf Size:134K _samhop

STT03N20
STT03N20

Green Product STT03L03 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 104 @ VGS=10V Surface Mount Package. 30V 3A 149 @ VGS=4.5V ESD Protected. D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM

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