STT03N20 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STT03N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Qgⓘ - Total Gate Charge: 3.6 nC
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.43 Ohm
   Package: SOT223

STT03N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS