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FDD6637F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD6637F085
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0116 Ohm
   Paquete / Cubierta: TO252 DPAK

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FDD6637F085 Datasheet (PDF)

 7.1. Size:345K  fairchild semi
fdd6637 f085.pdf

FDD6637F085 FDD6637F085

December 2010FDD6637_F085P-Channel PowerTrench MOSFET-35V, -21A, 18m ApplicationsFeatures Typ rDS(on) = 9.7m at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4m at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant2010 Fairchild Sem

 7.2. Size:121K  fairchild semi
fdd6637.pdf

FDD6637F085 FDD6637F085

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using 55 A, 35 V RDS(ON) = 11.6 m @ VGS = 10 V Fairchild Semiconductors proprietary PowerTrench RDS(ON) = 18 m @ VGS = 4.5 V technology to deliver low Rdson and optimized Bvdss High performance trench technology for extremely capa

 7.3. Size:372K  onsemi
fdd6637.pdf

FDD6637F085 FDD6637F085

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:764K  cn vbsemi
fdd6637.pdf

FDD6637F085 FDD6637F085

FDD6637www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.009 at VGS = - 10 V 80RoHS*- 30COMPLIANT0.012 at VGS = - 4.5 V 80STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGa

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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