All MOSFET. FDD6637_F085 Datasheet

 

FDD6637_F085 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD6637_F085

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 68 W

Maximum Drain-Source Voltage |Vds|: 35 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 55 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 45 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0116 Ohm

Package: TO252, DPAK

FDD6637_F085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD6637_F085 Datasheet (PDF)

0.1. fdd6637 f085.pdf Size:345K _fairchild_semi

FDD6637_F085
FDD6637_F085

December 2010 FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Applications Features Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant ©2010 Fairchild Sem

7.1. fdd6637.pdf Size:121K _fairchild_semi

FDD6637_F085
FDD6637_F085

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V Fairchild Semiconductor’s proprietary PowerTrench RDS(ON) = 18 mΩ @ VGS = –4.5 V technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capa

 8.1. fdd6632.pdf Size:270K _fairchild_semi

FDD6637_F085
FDD6637_F085

October 2004 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 70mΩ General Description Features This device employs a new advanced trench MOSFET • Fast switching technology and features low gate charge while maintaining • rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A low on-resistance. • rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A Optimized for switching

8.2. fdd6635.pdf Size:199K _fairchild_semi

FDD6637_F085
FDD6637_F085

 February 2007 tm FDD6635 35V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 mΩ @ VGS = 4.5 V capability to offer superior performance benefit in the

 8.3. fdd6630a.pdf Size:68K _fairchild_semi

FDD6637_F085
FDD6637_F085

April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low g

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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