Справочник MOSFET. FDD6637_F085

 

FDD6637_F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDD6637_F085

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 68 W

Предельно допустимое напряжение сток-исток (Uds): 35 V

Предельно допустимое напряжение затвор-исток (Ugs): 25 V

Максимально допустимый постоянный ток стока (Id): 55 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 45 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0116 Ohm

Тип корпуса: TO252, DPAK

Аналог (замена) для FDD6637_F085

 

 

FDD6637_F085 Datasheet (PDF)

1.1. fdd6637 f085.pdf Size:345K _fairchild_semi

FDD6637_F085
FDD6637_F085

December 2010 FDD6637_F085 P-Channel PowerTrench® MOSFET -35V, -21A, 18mΩ Applications Features Typ rDS(on) = 9.7mΩ at VGS = -10V, ID =- 14A Inverter Typ rDS(on) = 14.4mΩ at VGS = -4.5V, ID =- 11A Power Supplies Typ Qg(10) = 45nC at VGS = -10V High performance trench technology for extremely low rDS(on). Qualified to AEC Q101 RoHS Compliant ©2010 Fairchild Sem

3.1. fdd6637.pdf Size:121K _fairchild_semi

FDD6637_F085
FDD6637_F085

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using • –55 A, –35 V RDS(ON) = 11.6 mΩ @ VGS = –10 V Fairchild Semiconductor’s proprietary PowerTrench RDS(ON) = 18 mΩ @ VGS = –4.5 V technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capa

 4.1. fdd6632.pdf Size:270K _fairchild_semi

FDD6637_F085
FDD6637_F085

October 2004 FDD6632 N-Channel Logic Level UltraFET® Trench Power MOSFET 30V, 9A, 70mΩ General Description Features This device employs a new advanced trench MOSFET • Fast switching technology and features low gate charge while maintaining • rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A low on-resistance. • rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A Optimized for switching

4.2. fdd6635.pdf Size:199K _fairchild_semi

FDD6637_F085
FDD6637_F085

 February 2007 tm FDD6635 35V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench • 59 A, 35 V RDS(ON) = 10 mΩ @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 mΩ @ VGS = 4.5 V capability to offer superior performance benefit in the

 4.3. fdd6630a.pdf Size:68K _fairchild_semi

FDD6637_F085
FDD6637_F085

April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low g

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