FDD6770A Todos los transistores

 

FDD6770A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD6770A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FDD6770A datasheet

 ..1. Size:310K  fairchild semi
fdd6770a.pdf pdf_icon

FDD6770A

January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has bee

 ..2. Size:287K  inchange semiconductor
fdd6770a.pdf pdf_icon

FDD6770A

isc N-Channel MOSFET Transistor FDD6770A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.1. Size:326K  fairchild semi
fdd6776a.pdf pdf_icon

FDD6770A

January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench MOSFET 25 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 A synchronous or conventional switching PWM control

 8.2. Size:313K  fairchild semi
fdd6778a.pdf pdf_icon

FDD6770A

January 2009 FDD6778A N-Channel PowerTrench MOSFET 25 V, 14.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has

Otros transistores... STT03N20 , FDD6635 , FDD6637 , FDD6637F085 , FDD6680AS , STT03N10 , FDD6685 , FDD6760A , IRF640 , FDD6778A , FDD6780A , FDD6796A , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F .

History: FDD6778A

 

 

 


 
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