FDD6770A - описание и поиск аналогов

 

Аналоги FDD6770A. Основные параметры


   Наименование производителя: FDD6770A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FDD6770A

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD6770A даташит

 ..1. Size:310K  fairchild semi
fdd6770a.pdfpdf_icon

FDD6770A

January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has bee

 ..2. Size:287K  inchange semiconductor
fdd6770a.pdfpdf_icon

FDD6770A

isc N-Channel MOSFET Transistor FDD6770A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.1. Size:326K  fairchild semi
fdd6776a.pdfpdf_icon

FDD6770A

January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench MOSFET 25 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 A synchronous or conventional switching PWM control

 8.2. Size:313K  fairchild semi
fdd6778a.pdfpdf_icon

FDD6770A

January 2009 FDD6778A N-Channel PowerTrench MOSFET 25 V, 14.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has

Другие MOSFET... STT03N20 , FDD6635 , FDD6637 , FDD6637F085 , FDD6680AS , STT03N10 , FDD6685 , FDD6760A , IRF640 , FDD6778A , FDD6780A , FDD6796A , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F .

 

 

 


 
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