FDD6770A - параметры транзистора MOSFET, его аналоги, datasheet

FDD6770A Datasheet (PDF)

..1. Size:310K fairchild semi
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January 2009FDD6770AN-Channel PowerTrench MOSFET 25 V, 4.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 Asynchronous or conventional switching PWM controllers. It has bee

..2. Size:287K inchange semiconductor
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isc N-Channel MOSFET Transistor FDD6770AFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

8.1. Size:326K fairchild semi
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January 2009FDD6776A / FDU6776A_F071N-Channel PowerTrench MOSFET 25 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 Asynchronous or conventional switching PWM control

8.2. Size:313K fairchild semi
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January 2009FDD6778AN-Channel PowerTrench MOSFET 25 V, 14.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 Asynchronous or conventional switching PWM controllers. It has