Справочник MOSFET. FDD6770A

 

FDD6770A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD6770A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для FDD6770A

 

 

FDD6770A Datasheet (PDF)

 ..1. Size:310K  fairchild semi
 fdd6770a.pdf

FDD6770A FDD6770A

January 2009FDD6770AN-Channel PowerTrench MOSFET 25 V, 4.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 Asynchronous or conventional switching PWM controllers. It has bee

 ..2. Size:287K  inchange semiconductor
 fdd6770a.pdf

FDD6770A FDD6770A

isc N-Channel MOSFET Transistor FDD6770AFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =4m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

 8.1. Size:326K  fairchild semi
 fdd6776a.pdf

FDD6770A FDD6770A

January 2009FDD6776A / FDU6776A_F071N-Channel PowerTrench MOSFET 25 V, 7.5 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 Asynchronous or conventional switching PWM control

 8.2. Size:313K  fairchild semi
 fdd6778a.pdf

FDD6770A FDD6770A

January 2009FDD6778AN-Channel PowerTrench MOSFET 25 V, 14.0 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 Asynchronous or conventional switching PWM controllers. It has

 8.3. Size:287K  inchange semiconductor
 fdd6776a.pdf

FDD6770A FDD6770A

isc N-Channel MOSFET Transistor FDD6776AFEATURESDrain Current : I =30A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =7.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.4. Size:287K  inchange semiconductor
 fdd6778a.pdf

FDD6770A FDD6770A

isc N-Channel MOSFET Transistor FDD6778AFEATURESDrain Current : I =10A@ T =25D CDrain Source Voltage: V =25V(Min)DSSStatic Drain-Source On-Resistance: R =14m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

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