FDD6770A PDF and Equivalents Search

 ..1. Size:310K  fairchild semi
 fdd6770a.pdf

January 2009 FDD6770A N-Channel PowerTrench MOSFET 25 V, 4.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.0 m at VGS = 10 V, ID = 24 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 8.0 m at VGS = 4.5 V, ID = 18.4 A synchronous or conventional switching PWM controllers. It has bee... See More ⇒

 ..2. Size:287K  inchange semiconductor
 fdd6770a.pdf

isc N-Channel MOSFET Transistor FDD6770A FEATURES Drain Current I =50A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr... See More ⇒

 8.1. Size:326K  fairchild semi
 fdd6776a.pdf

January 2009 FDD6776A / FDU6776A_F071 N-Channel PowerTrench MOSFET 25 V, 7.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.5 m at VGS = 10 V, ID = 17.7 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 17.0m at VGS = 4.5 V, ID = 13.2 A synchronous or conventional switching PWM control... See More ⇒

 8.2. Size:313K  fairchild semi
 fdd6778a.pdf

January 2009 FDD6778A N-Channel PowerTrench MOSFET 25 V, 14.0 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 14.0 m at VGS = 10 V, ID = 10.0 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 30.0 m at VGS = 4.5 V, ID = 9.7 A synchronous or conventional switching PWM controllers. It has ... See More ⇒

 8.3. Size:287K  inchange semiconductor
 fdd6776a.pdf

isc N-Channel MOSFET Transistor FDD6776A FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒

 8.4. Size:287K  inchange semiconductor
 fdd6778a.pdf

isc N-Channel MOSFET Transistor FDD6778A FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒