FDD6N25 Datasheet. Equivalente

 ..1. Size:713K  fairchild semi
 fdd6n25 fdu6n25.pdf

February 2007 TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially ta

 8.1. Size:376K  fairchild semi
 fdd6n20 fdu6n20.pdf

May 2007 UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8 Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. Low Crss ( Typ. 6.3pF ) This advanced technology has b

 8.2. Size:618K  fairchild semi
 fdd6n20tm.pdf

November 2013 FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 600 m (Typ.) @ VGS = 10 V, ID = 2.3 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.7 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching p

 8.3. Size:356K  fairchild semi
 fdd6n20tf.pdf

May 2007 UniFETTM FDD6N20TM tm N-Channel MOSFET 200V, 4.5A, 0.8 Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. Low Crss ( Typ. 6.3pF ) This advanced technology has been espe

 8.4. Size:725K  onsemi
 fdd6n20tm.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:287K  inchange semiconductor
 fdd6n20tm.pdf

isc N-Channel MOSFET Transistor FDD6N20TM FEATURES Drain Current I =4.5A@ T =25 D C Drain Source Voltage V =200V(Min) DSS Static Drain-Source On-Resistance R =0.8 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi