FDD6N25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDD6N25
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 4.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.5 nC
Сопротивление сток-исток открытого транзистора (Rds): 1.1 Ohm
Тип корпуса: TO252 DPAK
FDD6N25 Datasheet (PDF)
fdd6n25 fdu6n25.pdf
February 2007TMUniFETFDD6N25 / FDU6N25250V N-Channel MOSFETFeatures Description 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 4.5 nC)stripe, DMOS technology. Low Crss ( typical 5 pF)This advanced technology has been especially ta
fdd6n20 fdu6n20.pdf
May 2007UniFETTMFDD6N20 / FDU6N20tmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has b
fdd6n20tm.pdf
November 2013FDD6N20TMN-Channel UniFETTM MOSFET200 V, 4.5 A, 800 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 600 m (Typ.) @ VGS = 10 V, ID = 2.3 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.7 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching p
fdd6n20tf.pdf
May 2007UniFETTMFDD6N20TMtmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has been espe
fdd6n20tm.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd6n20tm.pdf
isc N-Channel MOSFET Transistor FDD6N20TMFEATURESDrain Current : I =4.5A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.8(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
