All MOSFET. FDD6N25 Datasheet

 

FDD6N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD6N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO252, DPAK

FDD6N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD6N25 Datasheet (PDF)

1.1. fdd6n25 fdu6n25.pdf Size:713K _fairchild_semi

FDD6N25
FDD6N25

February 2007 TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS(on) = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 4.5 nC) stripe, DMOS technology. • Low Crss ( typical 5 pF) This advanced technology has been especially ta

4.1. fdd6n20 fdu6n20.pdf Size:376K _fairchild_semi

FDD6N25
FDD6N25

May 2007 UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. • Low Crss ( Typ. 6.3pF ) This advanced technology has b

4.2. fdd6n20tf.pdf Size:356K _fairchild_semi

FDD6N25
FDD6N25

May 2007 UniFETTM FDD6N20TM tm N-Channel MOSFET 200V, 4.5A, 0.8Ω Features Description • RDS(on) = 0.6Ω ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. • Low Crss ( Typ. 6.3pF ) This advanced technology has been espe

 4.3. fdd6n20tm.pdf Size:618K _fairchild_semi

FDD6N25
FDD6N25

November 2013 FDD6N20TM N-Channel UniFETTM MOSFET 200 V, 4.5 A, 800 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 600 mΩ (Typ.) @ VGS = 10 V, ID = 2.3 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 4.7 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching p

Datasheet: FDD6685 , FDD6760A , FDD6770A , FDD6778A , FDD6780A , FDD6796A , FDD6N20TM , STT03L06 , IRFZ34N , FDD6N50 , FDD6N50F , FDD6N50TM_F085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 .

 

 
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