12P10G-TND-R Todos los transistores

 

12P10G-TND-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 12P10G-TND-R
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 64 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

12P10G-TND-R Datasheet (PDF)

 ..1. Size:300K  utc
 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t 12p10g-s08-r 12p10g-tms4-t.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte

 ..2. Size:329K  utc
 12p10l-tms4-t 12p10g-tms4-t 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver

 6.1. Size:300K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10l-tms4-t.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte

 6.2. Size:329K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10g-s08-r.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver

MOSTRAR MÁS

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History: 12N45A | 12N70L-TF1-T

 

 
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