12P10G-TND-R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 12P10G-TND-R
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9.4 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 21 nC
Время нарастания (tr): 64 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.29 Ohm
Тип корпуса: TO-252D
Аналог (замена) для 12P10G-TND-R
12P10G-TND-R Datasheet (PDF)
12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t 12p10g-s08-r 12p10g-tms4-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte
12p10l-tms4-t 12p10g-tms4-t 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver
12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10l-tms4-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte
12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver
mtp12p10-d mtp12p10g.pdf
MTP12P10Preferred DevicePower MOSFET12 Amps, 100 VoltsP-Channel TO-220This Power MOSFET is designed for medium voltage, high speedhttp://onsemi.compower switching applications such as switching regulators, converters,solenoid and relay drivers.12 AMPERES, 100 VOLTSFeaturesRDS(on) = 300 mW Silicon Gate for Fast Switching Speeds - Switching Times SpecifiedP-Channela
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