12P10G-TND-R Specs and Replacement

Type Designator: 12P10G-TND-R

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 64 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO252

12P10G-TND-R substitution

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12P10G-TND-R datasheet

 ..1. Size:300K  utc
 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t 12p10g-s08-r 12p10g-tms4-t.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte... See More ⇒

 ..2. Size:329K  utc
 12p10l-tms4-t 12p10g-tms4-t 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver... See More ⇒

 6.1. Size:300K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10l-tms4-t.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte... See More ⇒

 6.2. Size:329K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10g-s08-r.pdf pdf_icon

12P10G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver... See More ⇒

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Detailed specifications: 12P10L-TMS2-T, 12P10G-TMS2-T, 12P10G-S08-R, 12P10L-TMS4-T, 12P10G-TMS4-T, 12P10L-TN3-R, 12P10G-TN3-R, 12P10L-TND-R, 18N50, 12P10L-TQ2-R, 12P10G-TQ2-R, 12P10L-TQ2-T, 12P10G-TQ2-T, 13N50L-T2Q-T, 13N50G-T2Q-T, 13N50L-TQ2-T, 13N50G-TQ2-T

Keywords - 12P10G-TND-R MOSFET specs

 12P10G-TND-R cross reference

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 12P10G-TND-R substitution

 12P10G-TND-R replacement

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