FDD7N20TM Todos los transistores

 

FDD7N20TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD7N20TM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 43 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Resistencia drenaje-fuente RDS(on): 0.69 Ohm

Empaquetado / Estuche: TO252, DPAK

Búsqueda de reemplazo de MOSFET FDD7N20TM

 

FDD7N20TM Datasheet (PDF)

1.1. fdd7n20tm.pdf Size:607K _fairchild_semi

FDD7N20TM
FDD7N20TM

November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo

3.1. fdd7n20 fdu7n20.pdf Size:346K _fairchild_semi

FDD7N20TM
FDD7N20TM

April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69Ω Features Description • RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge( Typ. 5nC ) stripe, DMOS technology. • Low Crss ( Typ. 5pF ) This advanced technology has bee

 4.1. fdd7n25lztm.pdf Size:285K _fairchild_semi

FDD7N20TM
FDD7N20TM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS(on) = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ.12nC) DMOS technology. • Low Crss ( Typ. 8pF) This advance technology has been especial

4.2. fdd7n25lz.pdf Size:291K _fairchild_semi

FDD7N20TM
FDD7N20TM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS(on) = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ.12nC) DMOS technology. • Low Crss ( Typ. 8pF) This advance technology has been especial

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


FDD7N20TM
  FDD7N20TM
  FDD7N20TM
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRFU430A | IRFSL7787 | IRFSL7762 | IRFSL4510 | IRFP4905 | IRFP3207Z | IRFL3713S | IPI80CN10N | IPI600N25N3 | IPI530N15N3 | IPI35CN10N | IPI320N20N3 | IPI26CN10N | IPI200N25N3 | IPI200N15N3 |

 

 

 
Back to Top