All MOSFET. FDD7N20TM Datasheet

 

FDD7N20TM MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD7N20TM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 43 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.69 Ohm

Package: TO252, DPAK

FDD7N20TM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD7N20TM Datasheet (PDF)

0.1. fdd7n20tm.pdf Size:607K _fairchild_semi

FDD7N20TM
FDD7N20TM

November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage • RDS(on) = 580 mΩ (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo

7.1. fdd7n20 fdu7n20.pdf Size:346K _fairchild_semi

FDD7N20TM
FDD7N20TM

April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69Ω Features Description • RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge( Typ. 5nC ) stripe, DMOS technology. • Low Crss ( Typ. 5pF ) This advanced technology has bee

 8.1. fdd7n25lztm.pdf Size:285K _fairchild_semi

FDD7N20TM
FDD7N20TM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS(on) = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ.12nC) DMOS technology. • Low Crss ( Typ. 8pF) This advance technology has been especial

8.2. fdd7n25lz.pdf Size:291K _fairchild_semi

FDD7N20TM
FDD7N20TM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55Ω Features Description • RDS(on) = 0.43Ω ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild’s proprietary, planar stripe, • Low Gate Charge ( Typ.12nC) DMOS technology. • Low Crss ( Typ. 8pF) This advance technology has been especial

Datasheet: FDD6780A , FDD6796A , FDD6N20TM , STT03L06 , FDD6N25 , FDD6N50 , FDD6N50F , FDD6N50TM_F085 , IRF520 , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , FDD8424H_F085 , STT02N10 , FDD8444 , FDD8444_F085 .

 

 
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