FDD7N20TM MOSFET PDF: N-Ch, 200V, 5A. Datasheet. Full specification with pinout and replacement list

FDD7N20TM Specs and Replacement

   Type Designator: FDD7N20TM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
Package: TO252 DPAK

FDD7N20TM substitution

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FDD7N20TM datasheet

..1. Size:607K fairchild semi
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November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo... See More ⇒

7.1. Size:346K fairchild semi
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April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69 Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge( Typ. 5nC ) stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has bee... See More ⇒

8.1. Size:285K fairchild semi
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December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especial... See More ⇒

8.2. Size:291K fairchild semi
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