FDD7N20TM datasheet, аналоги, основные параметры

Наименование производителя: FDD7N20TM  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 43 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.69 Ohm

Тип корпуса: TO252 DPAK

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Аналог (замена) для FDD7N20TM

- подборⓘ MOSFET транзистора по параметрам

 

FDD7N20TM даташит

 ..1. Size:607K  fairchild semi
 fdd7n20tm.pdf pdf_icon

FDD7N20TM

November 2013 FDD7N20TM N-Channel UniFETTM MOSFET 200 V, 5 A, 690 m Features Description UniFETTM MOSFET is Fairchild Semiconductor s high voltage RDS(on) = 580 m (Typ.) @ VGS = 10 V, ID = 2.5 A MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 5 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching perfo

 7.1. Size:346K  fairchild semi
 fdd7n20 fdu7n20.pdf pdf_icon

FDD7N20TM

April 2007 UniFETTM FDD7N20 / FDU7N20 tm N-Channel MOSFET 200V, 5A, 0.69 Features Description RDS(on) = 0.58 ( Typ. ) @ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge( Typ. 5nC ) stripe, DMOS technology. Low Crss ( Typ. 5pF ) This advanced technology has bee

 8.1. Size:285K  fairchild semi
 fdd7n25lztm.pdf pdf_icon

FDD7N20TM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especial

 8.2. Size:291K  fairchild semi
 fdd7n25lz.pdf pdf_icon

FDD7N20TM

December 2010 UniFETTM FDD7N25LZ N-Channel MOSFET 250V, 6.2A, 0.55 Features Description RDS(on) = 0.43 ( Typ.)@ VGS = 10V, ID = 3.1A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ.12nC) DMOS technology. Low Crss ( Typ. 8pF) This advance technology has been especial

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FDD6780A, FDD6796A, FDD6N20TM, STT03L06, FDD6N25, FDD6N50, FDD6N50F, FDD6N50TMF085, 10N60, STT03L03, FDD7N25LZ, FDD8424H, STT02N20, FDD8424HF085, STT02N10, FDD8444, FDD8444F085