FDD8424H_F085 Todos los transistores

 

FDD8424H_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD8424H_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.024 Ohm

Empaquetado / Estuche: TO252, DPAK

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FDD8424H_F085 Datasheet (PDF)

1.1. fdd8424h f085.pdf Size:808K _fairchild_semi

FDD8424H_F085
FDD8424H_F085

October 2008 FDD8424H_F085 tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m? P-Channel: -40V, -20A, 54m? Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m? at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max rDS(on) = 30

1.2. fdd8424h f085a.pdf Size:541K _fairchild_semi

FDD8424H_F085
FDD8424H_F085

Jan 2013 FDD8424H_F085A tm Dual N & P-Channel PowerTrench® MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A advanced PowerTrench process that has been especially Max rDS(

 2.1. fdd8424h.pdf Size:651K _fairchild_semi

FDD8424H_F085
FDD8424H_F085

March 2007 FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m? P-Channel: -40V, -20A, 54m? Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m? at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max rDS(on) = 30m? at V

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