FDD8424HF085 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD8424HF085  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: TO252 DPAK

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FDD8424HF085 datasheet

 6.1. Size:651K  fairchild semi
fdd8424h.pdf pdf_icon

FDD8424HF085

March 2007 FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max rDS(on)

 6.2. Size:541K  fairchild semi
fdd8424h f085a.pdf pdf_icon

FDD8424HF085

Jan 2013 FDD8424H_F085A tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench process that has been especially Max rDS(

 6.3. Size:808K  fairchild semi
fdd8424h f085.pdf pdf_icon

FDD8424HF085

October 2008 FDD8424H_F085 tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max

 6.4. Size:452K  onsemi
fdd8424h.pdf pdf_icon

FDD8424HF085

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