FDD8424HF085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD8424HF085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: TO252 DPAK
Búsqueda de reemplazo de FDD8424HF085 MOSFET
Principales características: FDD8424HF085
fdd8424h.pdf
March 2007 FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max rDS(on)
fdd8424h f085a.pdf
Jan 2013 FDD8424H_F085A tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench process that has been especially Max rDS(
fdd8424h f085.pdf
October 2008 FDD8424H_F085 tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max
fdd8424h.pdf
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Otros transistores... FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , 7N65 , STT02N10 , FDD8444 , FDD8444F085 , FDD8444LF085 , FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 .
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