FDD8424HF085 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD8424HF085 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
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FDD8424HF085 datasheet
fdd8424h.pdf
March 2007 FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max rDS(on)
fdd8424h f085a.pdf
Jan 2013 FDD8424H_F085A tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench process that has been especially Max rDS(
fdd8424h f085.pdf
October 2008 FDD8424H_F085 tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max
fdd8424h.pdf
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Otros transistores... FDD6N50, FDD6N50F, FDD6N50TMF085, FDD7N20TM, STT03L03, FDD7N25LZ, FDD8424H, STT02N20, 7N65, STT02N10, FDD8444, FDD8444F085, FDD8444LF085, FDD8445, FDD8445F085, FDD8447L, FDD8447LF085
Parámetros del MOSFET. Cómo se afectan entre sí.
History: DSE065N10L3A | IRF8010PBF | FDB8442F085 | NDH8302P | HMS100N85D | HM75N75K | APT6060AN
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