All MOSFET. FDD8424HF085 Datasheet

 

FDD8424HF085 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD8424HF085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO252 DPAK

 FDD8424HF085 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD8424HF085 Datasheet (PDF)

 6.1. Size:651K  fairchild semi
 fdd8424h.pdf

FDD8424HF085 FDD8424HF085

March 2007FDD8424HtmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench- process that has been especially Max rDS(on)

 6.2. Size:541K  fairchild semi
 fdd8424h f085a.pdf

FDD8424HF085 FDD8424HF085

Jan 2013FDD8424H_F085AtmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench process that has been especially Max rDS(

 6.3. Size:808K  fairchild semi
 fdd8424h f085.pdf

FDD8424HF085 FDD8424HF085

October 2008FDD8424H_F085tmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench- process that has been especially Max

 6.4. Size:452K  onsemi
 fdd8424h.pdf

FDD8424HF085 FDD8424HF085

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