FDD8424HF085 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDD8424HF085
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: TO252 DPAK
- подбор MOSFET транзистора по параметрам
FDD8424HF085 Datasheet (PDF)
fdd8424h.pdf

March 2007FDD8424HtmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench- process that has been especially Max rDS(on)
fdd8424h f085a.pdf

Jan 2013FDD8424H_F085AtmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench process that has been especially Max rDS(
fdd8424h f085.pdf

October 2008FDD8424H_F085tmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench- process that has been especially Max
fdd8424h.pdf

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Другие MOSFET... FDD6N50 , FDD6N50F , FDD6N50TMF085 , FDD7N20TM , STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , IRFP250N , STT02N10 , FDD8444 , FDD8444F085 , FDD8444LF085 , FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 .
History: SI9945BDY | NVTFS002N04C
History: SI9945BDY | NVTFS002N04C



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