FDD8424HF085 datasheet, аналоги, основные параметры

Наименование производителя: FDD8424HF085  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 30 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm

Тип корпуса: TO252 DPAK

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Аналог (замена) для FDD8424HF085

- подборⓘ MOSFET транзистора по параметрам

 

FDD8424HF085 даташит

 6.1. Size:651K  fairchild semi
 fdd8424h.pdf pdf_icon

FDD8424HF085

March 2007 FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max rDS(on)

 6.2. Size:541K  fairchild semi
 fdd8424h f085a.pdf pdf_icon

FDD8424HF085

Jan 2013 FDD8424H_F085A tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench process that has been especially Max rDS(

 6.3. Size:808K  fairchild semi
 fdd8424h f085.pdf pdf_icon

FDD8424HF085

October 2008 FDD8424H_F085 tm Dual N & P-Channel PowerTrench MOSFET N-Channel 40V, 20A, 24m P-Channel -40V, -20A, 54m Features General Description Q1 N-Channel These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor s Max rDS(on) = 24m at VGS = 10V, ID = 9.0A advanced PowerTrench- process that has been especially Max

 6.4. Size:452K  onsemi
 fdd8424h.pdf pdf_icon

FDD8424HF085

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