25N10G-TN3-R Todos los transistores

 

25N10G-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 25N10G-TN3-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 41 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de 25N10G-TN3-R MOSFET

   - Selección ⓘ de transistores por parámetros

 

25N10G-TN3-R Datasheet (PDF)

 ..1. Size:225K  utc
 25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdf pdf_icon

25N10G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTCs perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati

 8.1. Size:238K  ape
 ap25n10gh.pdf pdf_icon

25N10G-TN3-R

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS

 8.2. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf pdf_icon

25N10G-TN3-R

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220

 8.3. Size:100K  ape
 ap25n10gh-hf ap25n10gj-hf.pdf pdf_icon

25N10G-TN3-R

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design

MOSTRAR MÁS

Otros transistores... 25N10G-TF1-T , 25N10L-TF2-T , 25N10G-TF2-T , 25N10L-TF3-T , 25N10G-TF3-T , 25N10L-TM3-T , 25N10G-TM3-T , 25N10L-TN3-R , TK10A60D , 2N60L-T2Q-T , 2N60G-T2Q-T , 2N60L-T60-K , 2N60G-T60-K , 2N60L-T6C-K , 2N60G-T6C-K , 2N60G-E-K08-5060-R , 2N60G-TM3-T .

History: CHM1305WGP | ME60N03AS | HM2809DR | ME60P06T | 2N60G-E-K08-5060-R | FQU5P20 | 2N60L-T2Q-T

 

 
Back to Top

 


 
.