25N10G-TN3-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 25N10G-TN3-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 41 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 23 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 28 nS
Conductancia de drenaje-sustrato (Cd): 270 pF
Resistencia entre drenaje y fuente RDS(on): 0.08 Ohm
Paquete / Cubierta: TO-252
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25N10G-TN3-R Datasheet (PDF)
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