Справочник MOSFET. 25N10G-TN3-R

 

25N10G-TN3-R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 25N10G-TN3-R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 41 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для 25N10G-TN3-R

 

 

25N10G-TN3-R Datasheet (PDF)

 ..1. Size:225K  utc
 25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdf

25N10G-TN3-R 25N10G-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTCs perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati

 8.1. Size:238K  ape
 ap25n10gh.pdf

25N10G-TN3-R 25N10G-TN3-R

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS

 8.2. Size:100K  ape
 ap25n10gp-hf ap25n10gs-hf.pdf

25N10G-TN3-R 25N10G-TN3-R

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220

 8.3. Size:100K  ape
 ap25n10gh-hf ap25n10gj-hf.pdf

25N10G-TN3-R 25N10G-TN3-R

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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