25N10G-TN3-R Specs and Replacement
Type Designator: 25N10G-TN3-R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO-252
25N10G-TN3-R substitution
- MOSFET ⓘ Cross-Reference Search
25N10G-TN3-R datasheet
25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati... See More ⇒
ap25n10gh.pdf
AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description AP25N10 series are from Advanced Power innovated design and silicon G process technology to achieve the lowest possible on-resistance and D S... See More ⇒
ap25n10gp-hf ap25n10gs-hf.pdf
AP25N10GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-220... See More ⇒
ap25n10gh-hf ap25n10gj-hf.pdf
AP25N10GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23A G S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design... See More ⇒
Detailed specifications: 25N10G-TF1-T, 25N10L-TF2-T, 25N10G-TF2-T, 25N10L-TF3-T, 25N10G-TF3-T, 25N10L-TM3-T, 25N10G-TM3-T, 25N10L-TN3-R, 13N50, 2N60L-T2Q-T, 2N60G-T2Q-T, 2N60L-T60-K, 2N60G-T60-K, 2N60L-T6C-K, 2N60G-T6C-K, 2N60G-E-K08-5060-R, 2N60G-TM3-T
Keywords - 25N10G-TN3-R MOSFET specs
25N10G-TN3-R cross reference
25N10G-TN3-R equivalent finder
25N10G-TN3-R pdf lookup
25N10G-TN3-R substitution
25N10G-TN3-R replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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