FDD850N10L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD850N10L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15.7 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
Paquete / Cubierta: TO252 DPAK
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FDD850N10L Datasheet (PDF)
fdd850n10l.pdf
December 2010FDD850N10LN-Channel PowerTrench MOSFET 100V, 15.7A, 75mFeatures Description RDS(on) = 61m ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advance PowerTrench process that has been especially RDS(on) = 64m ( Typ.) @ VGS = 5V, ID = 12Atailored to minimize the on-state resistance and yet maintain super
fdd850n10l.pdf
isc N-Channel MOSFET Transistor FDD850N10LFEATURESDrain Current : I =15.7A@ T =25D CDrain Source Voltage: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
fdd850n10ld.pdf
November 2013FDD850N10LD BoostPak (N-Channel PowerTrench MOSFET + Diode)100 V, 15.3 A, 75 mFeatures Description RDS(on) = 61 m (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- RDS(on) = 64 m (Typ.) @ VGS = 5.0 V, ID = 12 Amize the on-state resistance while maint
fdd8586 fdu8586.pdf
January 2007FDD8586/FDU8586tmN-Channel PowerTrench MOSFET 20V, 35A, 5.5mFeatures General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It h
fdd8580 fdu8580.pdf
July 2006FDD8580/FDU8580tmN-Channel PowerTrench MOSFET 20V, 35A, 9mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35Ato improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has been opti
fdd8580-6.pdf
FDD8580&-6www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Par
fdd8580.pdf
isc N-Channel MOSFET Transistor FDD8580FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =9.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
fdd8586.pdf
isc N-Channel MOSFET Transistor FDD8586FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =5.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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