FDD850N10L
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD850N10L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 15.7
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 22.2
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075
Ohm
Package:
TO252
DPAK
FDD850N10L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD850N10L
Datasheet (PDF)
..1. Size:319K fairchild semi
fdd850n10l.pdf 
December 2010FDD850N10LN-Channel PowerTrench MOSFET 100V, 15.7A, 75mFeatures Description RDS(on) = 61m ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advance PowerTrench process that has been especially RDS(on) = 64m ( Typ.) @ VGS = 5V, ID = 12Atailored to minimize the on-state resistance and yet maintain super
..2. Size:287K inchange semiconductor
fdd850n10l.pdf
isc N-Channel MOSFET Transistor FDD850N10LFEATURESDrain Current : I =15.7A@ T =25D CDrain Source Voltage: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen
0.1. Size:807K fairchild semi
fdd850n10ld.pdf
November 2013FDD850N10LD BoostPak (N-Channel PowerTrench MOSFET + Diode)100 V, 15.3 A, 75 mFeatures Description RDS(on) = 61 m (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- RDS(on) = 64 m (Typ.) @ VGS = 5.0 V, ID = 12 Amize the on-state resistance while maint
9.1. Size:388K fairchild semi
fdd8586 fdu8586.pdf
January 2007FDD8586/FDU8586tmN-Channel PowerTrench MOSFET 20V, 35A, 5.5mFeatures General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It h
9.2. Size:333K fairchild semi
fdd8580 fdu8580.pdf
July 2006FDD8580/FDU8580tmN-Channel PowerTrench MOSFET 20V, 35A, 9mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35Ato improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has been opti
9.3. Size:813K cn vbsemi
fdd8580-6.pdf
FDD8580&-6www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Par
9.4. Size:287K inchange semiconductor
fdd8580.pdf
isc N-Channel MOSFET Transistor FDD8580FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =9.0m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
9.5. Size:287K inchange semiconductor
fdd8586.pdf
isc N-Channel MOSFET Transistor FDD8586FEATURESDrain Current : I =35A@ T =25D CDrain Source Voltage: V =20V(Min)DSSStatic Drain-Source On-Resistance: R =5.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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