Справочник MOSFET. FDD850N10L

 

FDD850N10L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDD850N10L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 50 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.5 V

Максимально допустимый постоянный ток стока (Id): 15.7 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 22.2 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm

Тип корпуса: TO252, DPAK

Аналог (замена) для FDD850N10L

 

 

FDD850N10L Datasheet (PDF)

1.1. fdd850n10l.pdf Size:319K _fairchild_semi

FDD850N10L
FDD850N10L

December 2010 FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75m? Features Description RDS(on) = 61m? ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semicon- ductors advance PowerTrench process that has been especially RDS(on) = 64m? ( Typ.) @ VGS = 5V, ID = 12A tailored to minimize the on-state resistance and yet maintain superior switching

1.2. fdd850n10ld.pdf Size:807K _fairchild_semi

FDD850N10L
FDD850N10L

November 2013 FDD850N10LD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 15.3 A, 75 mΩ Features Description • RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s PowerTrench® process that has been tailored to mini- • RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A mize the on-state resistance while maint

 5.1. fdd8580.pdf Size:333K _upd-mosfet

FDD850N10L
FDD850N10L

July 2006 FDD8580/FDU8580 tm N-Channel PowerTrench® MOSFET 20V, 35A, 9mΩ Features General Description This N-Channel MOSFET has been designed specifically Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A to improve the overall efficiency of DC/DC converters using Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has been opti

5.2. fdd8586.pdf Size:388K _upd-mosfet

FDD850N10L
FDD850N10L

January 2007 FDD8586/FDU8586 tm N-Channel PowerTrench® MOSFET 20V, 35A, 5.5mΩ Features General Description Max rDS(on) = 5.5mΩ at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5mΩ at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It h

Другие MOSFET... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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