FDD86102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

June 2011FDD86102N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mFeatures Max rDS(on) = 24 m at VGS = 10 V, ID = 8 AGeneral Description Max rDS(on) = 38 m at VGS = 6 V, ID = 6 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rD

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2010FDD86102LZN-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 Abeen especially tailored to minimize the on-state resistance and switching

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD86102LZwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

isc N-Channel MOSFET Transistor FDD86102LZFEATURESStatic drain-source on-resistance:RDS(on)22.5m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC ConversionInvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Volta