FDD86102 - описание и поиск аналогов

June 2011 FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m Features Max rDS(on) = 24 m at VGS = 10 V, ID = 8 A General Description Max rDS(on) = 38 m at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rD

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2010 FDD86102LZ N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 A been especially tailored to minimize the on-state resistance and switching

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD86102LZ www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless

isc N-Channel MOSFET Transistor FDD86102LZ FEATURES Static drain-source on-resistance RDS(on) 22.5m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC-DC Conversion Inverters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Volta