FDD86102
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD86102
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 42
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13.4
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
TO252
DPAK
FDD86102
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD86102
Datasheet (PDF)
..1. Size:403K fairchild semi
fdd86102.pdf 
June 2011FDD86102N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mFeatures Max rDS(on) = 24 m at VGS = 10 V, ID = 8 AGeneral Description Max rDS(on) = 38 m at VGS = 6 V, ID = 6 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has High performance trench technology for extremely low rDS(on) been optimized for rD
..2. Size:581K onsemi
fdd86102.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:365K fairchild semi
fdd86102lz.pdf
October 2010FDD86102LZN-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 22.5 m at VGS = 10 V, ID = 8 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 31 m at VGS = 4.5 V, ID = 7 Abeen especially tailored to minimize the on-state resistance and switching
0.2. Size:579K onsemi
fdd86102lz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.3. Size:748K cn vbsemi
fdd86102lz.pdf
FDD86102LZwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless
0.4. Size:269K inchange semiconductor
fdd86102lz.pdf
isc N-Channel MOSFET Transistor FDD86102LZFEATURESStatic drain-source on-resistance:RDS(on)22.5m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC ConversionInvertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Volta
Datasheet: FDD8445F085
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, STT02N07
, K4145
, STT01N20
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