FDD8876 Datasheet. Equivalente

 ..1. Size:468K  fairchild semi
 fdd8876 fdu8876 fdu8876.pdf

N April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench MOSFET 30V, 73A, 8.2m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 10m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been o

 8.1. Size:331K  fairchild semi
 fdd8870 f085.pdf

Jan 2013 FDD8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for l

 8.2. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op

 8.3. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been

 8.4. Size:400K  fairchild semi
 fdd8878 fdu8878 fdu8878.pdf

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim

 8.5. Size:129K  onsemi
 fdd8870 fdu8870.pdf

September 2004 FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been o

 8.6. Size:400K  onsemi
 fdd8878 fdu8878.pdf

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m , VGS = 4.5V, ID = 35A controllers. It has been optim

 8.7. Size:266K  inchange semiconductor
 fdd8874.pdf

isc N-Channel MOSFET Transistor FDD8874 FEATURES Drain Current I = 116A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 5.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo