Справочник MOSFET. FDD8876

 

FDD8876 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDD8876
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 73 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 34 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0082 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FDD8876

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD8876 Datasheet (PDF)

 ..1. Size:468K  fairchild semi
 fdd8876 fdu8876 fdu8876.pdf pdf_icon

FDD8876

NApril 2008FDD8876 / FDU8876tmN-Channel PowerTrench MOSFET30V, 73A, 8.2mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 10m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o

 8.1. Size:331K  fairchild semi
 fdd8870 f085.pdf pdf_icon

FDD8876

Jan 2013FDD8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for l

 8.2. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDD8876

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 8.3. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf pdf_icon

FDD8876

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FDD8782 , FDD8796 , FDD8870 , STT01L07 , FDD8870F085 , STS8816 , FDD8874 , STS6N20 , P60NF06 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 .

History: AM7416NA

 

 
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