FDD8876 PDF and Equivalents Search

 

FDD8876 Specs and Replacement

Type Designator: FDD8876

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 73 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: TO252 DPAK

FDD8876 substitution

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FDD8876 datasheet

 ..1. Size:468K  fairchild semi
fdd8876 fdu8876 fdu8876.pdf pdf_icon

FDD8876

N April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench MOSFET 30V, 73A, 8.2m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 10m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been o... See More ⇒

 8.1. Size:331K  fairchild semi
fdd8870 f085.pdf pdf_icon

FDD8876

Jan 2013 FDD8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for l... See More ⇒

 8.2. Size:486K  fairchild semi
fdd8870 fdu8870.pdf pdf_icon

FDD8876

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been op... See More ⇒

 8.3. Size:659K  fairchild semi
fdd8874 fdu8874.pdf pdf_icon

FDD8876

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been... See More ⇒

Detailed specifications: FDD8782 , FDD8796 , FDD8870 , STT01L07 , FDD8870F085 , STS8816 , FDD8874 , STS6N20 , AO4407 , STS6604L , FDD8878 , STS6601 , FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 .

History: IXFT12N100

Keywords - FDD8876 MOSFET specs

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