FDD8876
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD8876
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 70
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 73
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 34
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082
Ohm
Package:
TO252
DPAK
FDD8876
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD8876
Datasheet (PDF)
..1. Size:468K fairchild semi
fdd8876 fdu8876 fdu8876.pdf 
NApril 2008FDD8876 / FDU8876tmN-Channel PowerTrench MOSFET30V, 73A, 8.2mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 10m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o
8.1. Size:331K fairchild semi
fdd8870 f085.pdf
Jan 2013FDD8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for l
8.2. Size:486K fairchild semi
fdd8870 fdu8870.pdf
April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op
8.3. Size:659K fairchild semi
fdd8874 fdu8874.pdf
oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been
8.4. Size:400K fairchild semi
fdd8878 fdu8878 fdu8878.pdf
0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim
8.5. Size:129K onsemi
fdd8870 fdu8870.pdf
September 2004FDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9m General Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o
8.6. Size:400K onsemi
fdd8878 fdu8878.pdf
0April 2008FDD8878 / FDU8878tmN-Channel PowerTrench MOSFET30V, 40A, 15mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 15m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 18.5m, VGS = 4.5V, ID = 35Acontrollers. It has been optim
8.7. Size:266K inchange semiconductor
fdd8874.pdf
isc N-Channel MOSFET Transistor FDD8874FEATURESDrain Current I = 116A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: FDD8782
, FDD8796
, FDD8870
, STT01L07
, FDD8870F085
, STS8816
, FDD8874
, STS6N20
, 20N50
, STS6604L
, FDD8878
, STS6601
, FDD8880
, STS6415
, FDD8882
, STS6409
, FDD8896
.
