FDD8N50NZ Todos los transistores

 

FDD8N50NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD8N50NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO252 DPAK
 

 Búsqueda de reemplazo de FDD8N50NZ MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDD8N50NZ datasheet

 ..1. Size:638K  fairchild semi
 fdd8n50nz.pdf pdf_icon

FDD8N50NZ

August 2010 UniFET-IITM FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85 Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC) technology. Low Crss ( Typ. 5pF) This advance technology has been especiall

 ..2. Size:714K  onsemi
 fdd8n50nz.pdf pdf_icon

FDD8N50NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:223K  inchange semiconductor
 fdd8n50nz.pdf pdf_icon

FDD8N50NZ

Isc N-Channel MOSFET Transistor FDD8N50NZ FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Otros transistores... FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 , 20N50 , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , FDG410NZ , FDG6301NF085 .

History: FDD20AN06A0F085

 

 

 


 
↑ Back to Top
.