FDD8N50NZ MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD8N50NZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 6.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 14 nC
Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
Package: TO252, DPAK
FDD8N50NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD8N50NZ Datasheet (PDF)
0.1. fdd8n50nz.pdf 
Size:638K _fairchild_semi
August 2010 UniFET-IITM FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85Ω Features Description • RDS(on) = 0.77Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS • Low Gate Charge ( Typ. 14nC) technology. • Low Crss ( Typ. 5pF) This advance technology has been especiall
Datasheet: FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896_F085 , STS4622 , IRF9640 , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , FDG410NZ , FDG6301N_F085 .
