FDD8N50NZ Datasheet and Replacement
Type Designator: FDD8N50NZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO252 DPAK
FDD8N50NZ substitution
FDD8N50NZ Datasheet (PDF)
fdd8n50nz.pdf

August 2010UniFET-IITMFDD8N50NZN-Channel MOSFET 500V, 6.5A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been especiall
fdd8n50nz.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd8n50nz.pdf

Isc N-Channel MOSFET Transistor FDD8N50NZFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Datasheet: FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896F085 , STS4622 , 2N60 , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , FDG410NZ , FDG6301NF085 .
Keywords - FDD8N50NZ MOSFET datasheet
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