All MOSFET. FDD8N50NZ Datasheet


FDD8N50NZ MOSFET. Datasheet pdf. Equivalent

Type Designator: FDD8N50NZ

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 6.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14 nC

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO252, DPAK

FDD8N50NZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FDD8N50NZ Datasheet (PDF)

0.1. fdd8n50nz.pdf Size:638K _fairchild_semi


August 2010 UniFET-IITM FDD8N50NZ N-Channel MOSFET 500V, 6.5A, 0.85Ω Features Description • RDS(on) = 0.77Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS • Low Gate Charge ( Typ. 14nC) technology. • Low Crss ( Typ. 5pF) This advance technology has been especiall

0.2. fdd8n50nz.pdf Size:223K _inchange_semiconductor


Isc N-Channel MOSFET Transistor FDD8N50NZ ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt


Datasheet: FDD8880 , STS6415 , FDD8882 , STS6409 , FDD8896 , STS6308 , FDD8896_F085 , STS4622 , IRF9640 , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , FDG410NZ , FDG6301N_F085 .


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