FDG328P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDG328P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 6 nC
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
Paquete / Cubierta: SC70
Búsqueda de reemplazo de FDG328P MOSFET
FDG328P Datasheet (PDF)
fdg328p.pdf

October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a
fdg328p.pdf

October 2000FDG328PP-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 Va rugged gate version of Fairchild SemiconductorsRDS(ON) = 0.210 @ VGS = 2.5 Vadvanced PowerTrench process. It has been optimizedfor power management a
fdg327n.pdf

October 2001FDG327N20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It h
fdg327nz.pdf

August 2008 FDG327NZ20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V.specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 140 m @ VGS = 1.8 Vswitching PWM controllers. It has been
Otros transistores... FDD8896 , STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , AON6380 , FDG330P , FDG332PZ , FDG410NZ , FDG6301NF085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ .



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