FDG328P - описание и поиск аналогов

 

FDG328P. Аналоги и основные параметры

Наименование производителя: FDG328P

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.75 W

|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.145 Ohm

Тип корпуса: SC70

Аналог (замена) для FDG328P

  - подбор ⓘ MOSFET транзистора по параметрам

 

FDG328P даташит

 ..1. Size:76K  fairchild semi
fdg328p.pdfpdf_icon

FDG328P

October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 V a rugged gate version of Fairchild Semiconductor s RDS(ON) = 0.210 @ VGS = 2.5 V advanced PowerTrench process. It has been optimized for power management a

 ..2. Size:78K  onsemi
fdg328p.pdfpdf_icon

FDG328P

October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 V a rugged gate version of Fairchild Semiconductor s RDS(ON) = 0.210 @ VGS = 2.5 V advanced PowerTrench process. It has been optimized for power management a

 9.1. Size:79K  fairchild semi
fdg327n.pdfpdf_icon

FDG328P

October 2001 FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It h

 9.2. Size:492K  fairchild semi
fdg327nz.pdfpdf_icon

FDG328P

August 2008 FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It has been

Другие MOSFET... FDD8896 , STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , IRFZ24N , FDG330P , FDG332PZ , FDG410NZ , FDG6301NF085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ .

History: FDG327NZ

 

 

 


 
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