FDG328P MOSFET Datasheet: P-Ch, 20V, 1.5A. Full specification with pinout and replacement list

FDG328P Specs and Replacement

Type Designator: FDG328P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: SC70

FDG328P substitution

- MOSFET ⓘ Cross-Reference Search

FDG328P datasheet

..1. Size:76K fairchild semi
fdg328p.pdf pdf_icon

October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in 1.5 A, 20 V. RDS(ON) = 0.145 @ VGS = 4.5 V a rugged gate version of Fairchild Semiconductor s RDS(ON) = 0.210 @ VGS = 2.5 V advanced PowerTrench process. It has been optimized for power management a... See More ⇒

..2. Size:78K onsemi
fdg328p.pdf pdf_icon

9.1. Size:79K fairchild semi
fdg327n.pdf pdf_icon

October 2001 FDG327N 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It h... See More ⇒

9.2. Size:492K fairchild semi
fdg327nz.pdf pdf_icon

August 2008 FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 1.5 A, 20 V. RDS(ON) = 90 m @ VGS = 4.5 V. specifically to improve the overall efficiency of DC/DC RDS(ON) = 100 m @ VGS = 2.5 V converters using either synchronous or conventional RDS(ON) = 140 m @ VGS = 1.8 V switching PWM controllers. It has been... See More ⇒