FDG330P Todos los transistores

 

FDG330P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDG330P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 5 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: SC70

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FDG330P Datasheet (PDF)

 ..1. Size:150K  fairchild semi
fdg330p.pdf

FDG330P
FDG330P

December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS

 9.1. Size:216K  fairchild semi
fdg332pz.pdf

FDG330P
FDG330P

December 2008FDG332PZtmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VG

 9.2. Size:566K  onsemi
fdg332pz.pdf

FDG330P
FDG330P

July 2007FDG332PZ tmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VGS =

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