FDG330P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDG330P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: SC70
Búsqueda de reemplazo de FDG330P MOSFET
FDG330P Datasheet (PDF)
fdg330p.pdf

December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchilds advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS
fdg332pz.pdf

December 2008FDG332PZtmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VG
fdg332pz.pdf

July 2007FDG332PZ tmP-Channel PowerTrench MOSFET -20V, -2.6A, 97mFeatures General DescriptionThis P-Channel MOSFET uses Fairchilds advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6Avoltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2Abattery power management applications. Max rDS(on) = 160m at VGS =
Otros transistores... STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , IRF830 , FDG332PZ , FDG410NZ , FDG6301NF085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , FDG6318P .
History: IRFIZ48N | FDD86102 | FDG1024NZ | FDD20AN06A0F085 | IXFT10N100 | FDG410NZ | IXFN106N20
History: IRFIZ48N | FDD86102 | FDG1024NZ | FDD20AN06A0F085 | IXFT10N100 | FDG410NZ | IXFN106N20



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SLI13N50C | SLH95R130GTZ | SLH65R180E7C | SLH60R075GTDI | SLH60R043E7D | SLH10RN20T | SLF95R760GTZ | SLF16N65S | SLF12N65SV | SLF10N65SV | SLE65R1K2E7 | SLD95R3K2GTZ | SLD90N03TB | SLD90N02TB | SLD8N65SV | SLD8N50UD
Popular searches
2sc1815 transistor | 2sd718 | 2n3053 transistor | 2sc458 replacement | bc557 transistor | 2n3638 | tip127 datasheet | irlz24n