FDG330P - аналоги, параметры транзистора - Справочник транзисторов

FDG330P даташит

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December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS

9.1. Size:216K fairchild semi
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December 2008 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VG

9.2. Size:566K onsemi
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July 2007 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VGS =

Другие MOSFET... STS6308 , FDD8896F085 , STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , 2N60 , FDG332PZ , FDG410NZ , FDG6301NF085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , FDG6318P .