FDG330P Datasheet. Specs and Replacement

Type Designator: FDG330P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SC70

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FDG330P datasheet

 ..1. Size:150K  fairchild semi
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FDG330P

December 2001 FDG330P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2 A, 12 V. RDS(ON) = 110 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 150 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 215 m @ VGS... See More ⇒

 9.1. Size:216K  fairchild semi
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FDG330P

December 2008 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VG... See More ⇒

 9.2. Size:566K  onsemi
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FDG330P

July 2007 FDG332PZ tm P-Channel PowerTrench MOSFET -20V, -2.6A, 97m Features General Description This P-Channel MOSFET uses Fairchild s advanced low Max rDS(on) = 95m at VGS = -4.5V, ID = -2.6A voltage PowerTrench process. It has been optimized for Max rDS(on) = 115m at VGS = -2.5V, ID = -2.2A battery power management applications. Max rDS(on) = 160m at VGS =... See More ⇒

Detailed specifications: STS6308, FDD8896F085, STS4622, FDD8N50NZ, FDG1024NZ, FDG327N, FDG327NZ, FDG328P, AO3407, FDG332PZ, FDG410NZ, FDG6301NF085, FDG6306P, FDG6308P, FDG6316P, FDG6317NZ, FDG6318P

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