FDG410NZ Todos los transistores

 

FDG410NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDG410NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: SC70
 

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FDG410NZ datasheet

 ..1. Size:283K  fairchild semi
 fdg410nz.pdf pdf_icon

FDG410NZ

March 2009 FDG410NZ Single N-Channel PowerTrench MOSFET 20 V, 2.2 A, 70 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 70 m at VGS = 4.5 V, ID = 2.2 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 77 m at VGS = 2.5 V, ID = 2.0 A synchronous or conventional switching PWM controllers. It

 ..2. Size:386K  onsemi
 fdg410nz.pdf pdf_icon

FDG410NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , P60NF06 , FDG6301NF085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , FDG6318P , FDG6318PZ , FDG6320C .

History: FDG6308P

 

 

 


 
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