FDG410NZ Datasheet. Specs and Replacement

Type Designator: FDG410NZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SC70

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FDG410NZ datasheet

 ..1. Size:283K  fairchild semi
 fdg410nz.pdf pdf_icon

FDG410NZ

March 2009 FDG410NZ Single N-Channel PowerTrench MOSFET 20 V, 2.2 A, 70 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 70 m at VGS = 4.5 V, ID = 2.2 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 77 m at VGS = 2.5 V, ID = 2.0 A synchronous or conventional switching PWM controllers. It... See More ⇒

 ..2. Size:386K  onsemi
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FDG410NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: STS4622, FDD8N50NZ, FDG1024NZ, FDG327N, FDG327NZ, FDG328P, FDG330P, FDG332PZ, MMIS60R580P, FDG6301NF085, FDG6306P, FDG6308P, FDG6316P, FDG6317NZ, FDG6318P, FDG6318PZ, FDG6320C

Keywords - FDG410NZ MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.