All MOSFET. FDG410NZ Datasheet

 

FDG410NZ Datasheet and Replacement


   Type Designator: FDG410NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.1 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SC70
 

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FDG410NZ Datasheet (PDF)

 ..1. Size:283K  fairchild semi
 fdg410nz.pdf pdf_icon

FDG410NZ

March 2009FDG410NZSingle N-Channel PowerTrench MOSFET 20 V, 2.2 A, 70 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 70 m at VGS = 4.5 V, ID = 2.2 Aimprove the overall efficiency of DC/DC converters using either Max rDS(on) = 77 m at VGS = 2.5 V, ID = 2.0 Asynchronous or conventional switching PWM controllers. It

 ..2. Size:386K  onsemi
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FDG410NZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: STS4622 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ , AO3401 , FDG6301NF085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , FDG6318P , FDG6318PZ , FDG6320C .

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