FDH055N15A Todos los transistores

November 2013 FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 m Features Description RDS(on) = 4.8 m (Typ.) @ VGS = 10 V, ID = 120 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge superior

MOSFET N-Channel, POWERTRENCH 150 V, 167 A, 5.9 mW FDH055N15A Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance. VDS RDS(ON) MAX ID MAX Features 150 V 5.9 mW @ 10 V 167 A RDS(on) = 4.8 mW (Typ.) @ V

isc N-Channel MOSFET Transistor FDH055N15A FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.