November 2013FDH055N15AN-Channel PowerTrench MOSFET150 V, 167 A, 5.9 mFeatures Description RDS(on) = 4.8 m (Typ.) @ VGS = 10 V, ID = 120 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintaining Low Gate Chargesuperior

MOSFET N-Channel,POWERTRENCH150 V, 167 A, 5.9 mWFDH055N15ADescriptionThis N-Channel MOSFET is produced using ON Semiconductorswww.onsemi.comadvanced POWERTRENCH process that has been tai-loredto minimize the on-state resistance while maintaining superiorswitching performance.VDS RDS(ON) MAX ID MAXFeatures150 V 5.9 mW @ 10 V 167 A RDS(on) = 4.8 mW (Typ.) @ V

isc N-Channel MOSFET Transistor FDH055N15AFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.