FDH055N15A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDH055N15A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 429
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 118
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 92
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0059
Ohm
Package:
TO247
TO3P
TO3PF
FDH055N15A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDH055N15A
Datasheet (PDF)
..1. Size:582K fairchild semi
fdh055n15a.pdf 
November 2013FDH055N15AN-Channel PowerTrench MOSFET150 V, 167 A, 5.9 mFeatures Description RDS(on) = 4.8 m (Typ.) @ VGS = 10 V, ID = 120 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintaining Low Gate Chargesuperior
..2. Size:435K onsemi
fdh055n15a.pdf
MOSFET N-Channel,POWERTRENCH150 V, 167 A, 5.9 mWFDH055N15ADescriptionThis N-Channel MOSFET is produced using ON Semiconductorswww.onsemi.comadvanced POWERTRENCH process that has been tai-loredto minimize the on-state resistance while maintaining superiorswitching performance.VDS RDS(ON) MAX ID MAXFeatures150 V 5.9 mW @ 10 V 167 A RDS(on) = 4.8 mW (Typ.) @ V
..3. Size:305K inchange semiconductor
fdh055n15a.pdf
isc N-Channel MOSFET Transistor FDH055N15AFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.
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