FDH055N15A Datasheet. Specs and Replacement

Type Designator: FDH055N15A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 429 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 118 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO247 TO3P TO3PF

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FDH055N15A datasheet

 ..1. Size:582K  fairchild semi
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FDH055N15A

November 2013 FDH055N15A N-Channel PowerTrench MOSFET 150 V, 167 A, 5.9 m Features Description RDS(on) = 4.8 m (Typ.) @ VGS = 10 V, ID = 120 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge superior ... See More ⇒

 ..2. Size:435K  onsemi
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FDH055N15A

MOSFET N-Channel, POWERTRENCH 150 V, 167 A, 5.9 mW FDH055N15A Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been tai-lored to minimize the on-state resistance while maintaining superior switching performance. VDS RDS(ON) MAX ID MAX Features 150 V 5.9 mW @ 10 V 167 A RDS(on) = 4.8 mW (Typ.) @ V... See More ⇒

 ..3. Size:305K  inchange semiconductor
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FDH055N15A

isc N-Channel MOSFET Transistor FDH055N15A FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

Detailed specifications: FDG6335N, FDG8842CZ, STS3620, STS3429, STS3426, FDG8850NZ, FDH038AN08A1, FDH047AN08A0, IRF840, FDH3632, STS3411A, FDH44N50, FDH45N50FF133, FDH5500F085, FDI030N06, FDI038AN06A0, FDI040N06

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