UT2301G-AE2-R Todos los transistores

 

UT2301G-AE2-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UT2301G-AE2-R
   Código: 23AG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.45(min) V
   Qgⓘ - Carga de la puerta: 5.4 nC
   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 127 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de UT2301G-AE2-R MOSFET

   - Selección ⓘ de transistores por parámetros

 

UT2301G-AE2-R Datasheet (PDF)

 ..1. Size:228K  utc
 ut2301g-ae2-r ut2301g-ae3-r.pdf pdf_icon

UT2301G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications s

 4.1. Size:794K  cn vbsemi
 ut2301g-ae3-r.pdf pdf_icon

UT2301G-AE2-R

UT2301G-AE3-Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC

 8.1. Size:183K  utc
 ut2301.pdf pdf_icon

UT2301G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications su

 8.2. Size:159K  utc
 ut2301z.pdf pdf_icon

UT2301G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorablestabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC co

MOSTRAR MÁS

Otros transistores... UT100N03L-TQ2-T , UT100N03G-TQ2-T , UT100N03L-TQ2-R , UT100N03G-TQ2-R , UT100N03G-K08-5060-R , UT20N03L-TN3-R , UT20N03G-TN3-R , UT20N03G-K08-5060-R , 7N65 , UT2302G-AE2-R , UT2302G-AE3-R , UT2305G-AE2-R , UT2305G-AE3-R , UT2305G-AG3-R , UT2305L-AE2-R , UT2305L-AE3-R , UT2305L-AL3-R .

 

 
Back to Top

 


 
.