UT2301G-AE2-R. Аналоги и основные параметры
Наименование производителя: UT2301G-AE2-R
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.14 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 127 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: SOT23
Аналог (замена) для UT2301G-AE2-R
- подборⓘ MOSFET транзистора по параметрам
UT2301G-AE2-R даташит
ut2301g-ae2-r ut2301g-ae3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications s
ut2301g-ae3-r.pdf
UT2301G-AE3-R www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLIC
ut2301.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications su
ut2301z.pdf
UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorable stabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC co
Другие IGBT... UT100N03L-TQ2-T, UT100N03G-TQ2-T, UT100N03L-TQ2-R, UT100N03G-TQ2-R, UT100N03G-K08-5060-R, UT20N03L-TN3-R, UT20N03G-TN3-R, UT20N03G-K08-5060-R, IRF630, UT2302G-AE2-R, UT2302G-AE3-R, UT2305G-AE2-R, UT2305G-AE3-R, UT2305G-AG3-R, UT2305L-AE2-R, UT2305L-AE3-R, UT2305L-AL3-R
History: STB100NF04 | CEB840G | NCE5055K | CEA6426 | HY150N075T
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Список транзисторов
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