All MOSFET. UT2301G-AE2-R Datasheet

 

UT2301G-AE2-R Datasheet and Replacement


   Type Designator: UT2301G-AE2-R
   Marking Code: 23AG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.45(min) V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.4 nC
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23
 

 UT2301G-AE2-R substitution

   - MOSFET ⓘ Cross-Reference Search

 

UT2301G-AE2-R Datasheet (PDF)

 ..1. Size:228K  utc
 ut2301g-ae2-r ut2301g-ae3-r.pdf pdf_icon

UT2301G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET Y2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications s

 4.1. Size:794K  cn vbsemi
 ut2301g-ae3-r.pdf pdf_icon

UT2301G-AE2-R

UT2301G-AE3-Rwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLIC

 8.1. Size:183K  utc
 ut2301.pdf pdf_icon

UT2301G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2301 Power MOSFET 2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications su

 8.2. Size:159K  utc
 ut2301z.pdf pdf_icon

UT2301G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD UT2301Z Power MOSFET 2.3A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UT2301Z is a P-channel enhancement mode power MOSFET with fast switching speed, low on-resistance and favorablestabilization. It can be used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC co

SHOW MORE

Datasheet: UT100N03L-TQ2-T , UT100N03G-TQ2-T , UT100N03L-TQ2-R , UT100N03G-TQ2-R , UT100N03G-K08-5060-R , UT20N03L-TN3-R , UT20N03G-TN3-R , UT20N03G-K08-5060-R , 7N65 , UT2302G-AE2-R , UT2302G-AE3-R , UT2305G-AE2-R , UT2305G-AE3-R , UT2305G-AG3-R , UT2305L-AE2-R , UT2305L-AE3-R , UT2305L-AL3-R .

History: AP13N50R | US5U1 | IRFD020 | AONS21321 | MCU18P10 | ZXMN4A06GTA | IXFP30N60X

Keywords - UT2301G-AE2-R MOSFET datasheet

 UT2301G-AE2-R cross reference
 UT2301G-AE2-R equivalent finder
 UT2301G-AE2-R lookup
 UT2301G-AE2-R substitution
 UT2301G-AE2-R replacement

 

 
Back to Top

 


 
.