FDI3632 Todos los transistores

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

isc N-Channel MOSFET Transistor FDI3632 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpose

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

isc N-Channel MOSFET Transistor FDI36352 FEATURES Drain Current I = 61A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpo