FDI3632 MOSFET Datasheet: N-Ch, 100V, 80A. Full specification with pinout and replacement list

FDI3632 Specs and Replacement

Type Designator: FDI3632

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO262 I2PAK

FDI3632 substitution

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FDI3632 datasheet

..1. Size:656K fairchild semi
fdb3632 fdp3632 fdi3632 fdh3632.pdf pdf_icon

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi... See More ⇒

..2. Size:282K inchange semiconductor
fdi3632.pdf pdf_icon

isc N-Channel MOSFET Transistor FDI3632 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power su pplies and general purpose... See More ⇒

9.1. Size:260K fairchild semi
fdi3652.pdf pdf_icon

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn... See More ⇒

9.2. Size:263K fairchild semi
fdb3652 fdp3652 fdi3652.pdf pdf_icon